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Advanced Technical Information
HiPerFET TM Power MOSFETs
V DSS
I D25
R DS(on)
ISOPLUS247 TM
(Electrically Isolated Back Surface)
IXFR 26N50
IXFR 24N50
500 V 24 A
500 V 22 A
t rr ￡ 250 ns
0.20 W
0.23 W
N-Channel Enhancement Mode
High dV/dt, Low t rr , HDMOS TM Family
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 247 TM
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
500
500
V
V
V GS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
26N50
± 20
± 30
26
V
V
A
G
D
Isolated back surface*
I DM
I AR
T C = 25 ° C, Pulse width limited by T JM
T C = 25 ° C
24N50
26N50
24N50
26N50
24N50
24
104
96
26
24
A
A
A
A
A
G = Gate
S = Source
* Patent pending
D = Drain
E AR
T C = 25 ° C
30
mJ
dv/dt
P D
T J
T JM
T stg
T L
V ISOL
Weight
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS t = 1 minute leads-to-tab
5
250
-55 ... +150
150
-55 ... +150
300
2500
6
V/ns
W
° C
° C
° C
° C
V~
g
Features
? Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
? Low drain to tab capacitance(<50pF)
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
Applications
? DC-DC converters
? Battery chargers
V DSS
V GS = 0 V, I D = 250uA
500
V
? Switched-mode and resonant-mode
power supplies
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 4mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
V GS = 10 V, I D = I T
Notes 1 & 2
T J = 25 ° C
T J = 125 ° C
26N50
24N50
2
4
± 100
200
1
0.20
0.23
V
nA
m A
mA
W
W
? DC choppers
? AC motor control
Advantages
? Easy assembly
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98526A (2/99)
1-2
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